[J-2-5] Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved MOS Characteristics

Y. Terada¹, M. Deura¹, Y. Shimogaki¹, Y. Nakano¹, M. Sugiyama¹ (1.Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2009.J-2-5