[J-2-5] Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved MOS Characteristics

Y. Terada¹、M. Deura¹、Y. Shimogaki¹、Y. Nakano¹、M. Sugiyama¹ (1.Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2009.J-2-5