[J-4-4] In_0.49GaP/Al_0.45GaAs/In_0.22GaAs/Al_0.22GaAs Barrier Enhancement-mode Pseudomorphic High Electron Mobility Transistor with an Enhanced Gate Forward Turn-on Voltage

J. Sung¹、J. Kim¹、K. Jang¹、K. S. Seo¹ (1.Seoul National Univ.)

https://doi.org/10.7567/SSDM.2009.J-4-4