Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel FETs on Silicon Substrates

H. C. Kang; R. Olac-vaw; H. Karasawa; Y. Miyamoto; H. Handa; T. Suemitsu; H. Fukidome; M. Suemitsu; T. Otsuji

doi:https://doi.org/10.7567/SSDM.2009.J-5-1

[J-5-1] Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel FETs on Silicon Substrates

H. C. Kang¹, R. Olac-vaw¹, H. Karasawa¹, Y. Miyamoto¹, H. Handa¹, T. Suemitsu^1,2, H. Fukidome^1,2, M. Suemitsu^1,2, T. Otsuji^1,2 (1.Tohoku Univ.(Japan), 2.CREST-JST(USA))

https://doi.org/10.7567/SSDM.2009.J-5-1

2009 International Conference on Solid State Devices and Materials

[J-5-1] Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel FETs on Silicon Substrates