Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel FETs on Silicon Substrates

H. C. Kang; R. Olac-vaw; H. Karasawa; Y. Miyamoto; H. Handa; T. Suemitsu; H. Fukidome; M. Suemitsu; T. Otsuji

doi:https://doi.org/10.7567/SSDM.2009.J-5-1

[J-5-1] Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel FETs on Silicon Substrates

H. C. Kang¹、R. Olac-vaw¹、H. Karasawa¹、Y. Miyamoto¹、H. Handa¹、T. Suemitsu^1,2、H. Fukidome^1,2、M. Suemitsu^1,2、T. Otsuji^1,2 (1.Tohoku Univ.(Japan)、2.CREST-JST(USA))

https://doi.org/10.7567/SSDM.2009.J-5-1

2009 International Conference on Solid State Devices and Materials

[J-5-1] Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel FETs on Silicon Substrates