[J-5-4] Low Voltage Operation of Inverted Staggered Amorphous Indium Gallium Zinc Oxide Thin Film Transistor with Al₂O₃ High-k Dielectric Material

Y. G. Yoon¹、J. H. Jang¹ (1.Gwangju Inst. of Sci. and Tech.)

https://doi.org/10.7567/SSDM.2009.J-5-4