[K-2-4] Device Design Schemes and Electrical Characterization of Nonvolatile Memory Thin-Film Transistors with the Gate Structure of Al/P(VDF-TrFE)/Al₂O₃/ZnO

S. M. Yoon¹, S. H. Yang¹, S. H. Ko Park¹, S. W. Jung¹, C. W. Byun¹, D. H. Cho¹, S. Y. Kang¹, C. S. Hwang¹, B. G. Yu¹ (1.ETRI)

https://doi.org/10.7567/SSDM.2009.K-2-4