The Japan Society of Applied Physics

[K-2-4] Device Design Schemes and Electrical Characterization of Nonvolatile Memory Thin-Film Transistors with the Gate Structure of Al/P(VDF-TrFE)/Al2O3/ZnO

S. M. Yoon1、S. H. Yang1、S. H. Ko Park1、S. W. Jung1、C. W. Byun1、D. H. Cho1、S. Y. Kang1、C. S. Hwang1、B. G. Yu1 (1.ETRI)

https://doi.org/10.7567/SSDM.2009.K-2-4