The Performance of Magnetic Tunnel Junction Integrated on the Back-end Metal Line of CMOS Circuits

T. Endoh; F. Iga; S. Ikeda; K. Miura; J. Hayakawa; M. Kamiyanagi; H. Hasegawa; T. Hanyu; H. Ohno

doi:https://doi.org/10.7567/SSDM.2009.K-7-6

[K-7-6] The Performance of Magnetic Tunnel Junction Integrated on the Back-end Metal Line of CMOS Circuits

T. Endoh¹, F. Iga¹, S. Ikeda¹, K. Miura^1,2, J. Hayakawa², M. Kamiyanagi¹, H. Hasegawa¹, T. Hanyu¹, H. Ohno¹ (1.Tohoku Univ.(Japan), 2.Hitachi, Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.K-7-6

2009 International Conference on Solid State Devices and Materials

[K-7-6] The Performance of Magnetic Tunnel Junction Integrated on the Back-end Metal Line of CMOS Circuits