[K-7-6] The Performance of Magnetic Tunnel Junction Integrated on the Back-end Metal Line of CMOS Circuits

T. Endoh¹、F. Iga¹、S. Ikeda¹、K. Miura^1,2、J. Hayakawa²、M. Kamiyanagi¹、H. Hasegawa¹、T. Hanyu¹、H. Ohno¹ (1.Tohoku Univ.(Japan)、2.Hitachi, Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.K-7-6