Superiority of ALD TiN with TDMAT Precursor for Metal-Gate MOSFET

T. Hayashida; K. Endo; Y. X. Liu; T. Matsukawa; S. Ouchi; K. Sakamoto; J. Tsukada; Y. Ishikawa; H. Yamauchi; A. Ogura; M. Masahara

doi:https://doi.org/10.7567/SSDM.2009.P-1-10

[P-1-10] Superiority of ALD TiN with TDMAT Precursor for Metal-Gate MOSFET

T. Hayashida¹, K. Endo², Y. X. Liu², T. Matsukawa², S. Ouchi², K. Sakamoto², J. Tsukada², Y. Ishikawa², H. Yamauchi², A. Ogura¹, M. Masahara^1,2 (1.Meiji Univ.(Japan), 2.AIST(Japan))

https://doi.org/10.7567/SSDM.2009.P-1-10

2009 International Conference on Solid State Devices and Materials

[P-1-10] Superiority of ALD TiN with TDMAT Precursor for Metal-Gate MOSFET