Superiority of ALD TiN with TDMAT Precursor for Metal-Gate MOSFET

T. Hayashida; K. Endo; Y. X. Liu; T. Matsukawa; S. Ouchi; K. Sakamoto; J. Tsukada; Y. Ishikawa; H. Yamauchi; A. Ogura; M. Masahara

doi:https://doi.org/10.7567/SSDM.2009.P-1-10

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜 2009年10月9日
Sendai Kokusai Hotel, Miyagi, Japan

[P-1-10] Superiority of ALD TiN with TDMAT Precursor for Metal-Gate MOSFET

T. Hayashida¹、K. Endo²、Y. X. Liu²、T. Matsukawa²、S. Ouchi²、K. Sakamoto²、J. Tsukada²、Y. Ishikawa²、H. Yamauchi²、A. Ogura¹、M. Masahara^1,2 (1.Meiji Univ.(Japan)、2.AIST(Japan))

https://doi.org/10.7567/SSDM.2009.P-1-10

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