Infrared Semiconductor Laser Annealing Used for Activation of Silicon Implanted with Boron and Phosphorus Atoms

N. Sano; K. Ukawa; T. Sameshima; M. Naito; N. Hamamoto

doi:https://doi.org/10.7567/SSDM.2009.P-1-18

[P-1-18] Infrared Semiconductor Laser Annealing Used for Activation of Silicon Implanted with Boron and Phosphorus Atoms

N. Sano¹、K. Ukawa²、T. Sameshima²、M. Naito³、N. Hamamoto³ (1.Hightec Systems Corp.(Japan)、2.Tokyo Univ. of Agri. And Tech.(Japan)、3.Nissin Ion Equipment Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.P-1-18

2009 International Conference on Solid State Devices and Materials

[P-1-18] Infrared Semiconductor Laser Annealing Used for Activation of Silicon Implanted with Boron and Phosphorus Atoms