[P-1-5] Characterization and Improvement of Charge Trapping in Gadolinium Incorporated Hf-based high-k/Metal gated n-MOSFETs

C. W. Chen¹, H. C. Lai¹, Y. L. Yeh¹, W. K. Yeh², S. H. Shu³, C. T. Lin³, C. H. Hsu³, L. W. Cheng³, M. Ma³ (1.Ming Hsin Univ. of Sci and Tech.(Taiwan), 2.National Univ. of Kaohsiung(Taiwan), 3.UMC(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-1-5