[P-1-5] Characterization and Improvement of Charge Trapping in Gadolinium Incorporated Hf-based high-k/Metal gated n-MOSFETs

C. W. Chen¹、H. C. Lai¹、Y. L. Yeh¹、W. K. Yeh²、S. H. Shu³、C. T. Lin³、C. H. Hsu³、L. W. Cheng³、M. Ma³ (1.Ming Hsin Univ. of Sci and Tech.(Taiwan)、2.National Univ. of Kaohsiung(Taiwan)、3.UMC(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-1-5