The Japan Society of Applied Physics

[P-10-2] Interface Characterization and Charge Storage Effect of a Polystrene Gate Dielectric Organic Thin-Film Transistor

K. Kim1, J. Jeong2, T. Lim2, Y. Kim2 (1.Samsung Electronics Co., Ltd.(Korea), 2.Hongik Univ.(Korea))

https://doi.org/10.7567/SSDM.2009.P-10-2