[P-10-2] Interface Characterization and Charge Storage Effect of a Polystrene Gate Dielectric Organic Thin-Film Transistor

K. Kim¹、J. Jeong²、T. Lim²、Y. Kim² (1.Samsung Electronics Co., Ltd.(Korea)、2.Hongik Univ.(Korea))

https://doi.org/10.7567/SSDM.2009.P-10-2