[P-13-3] Gate induced Cross-over between Fabry Perot and Quantum Dot Behavior in a Single-Walled Carbon Nanotube Hole-Transistor with Double Gate Structure
T. Kamimura1,2,3, K. Matsumoto1,3,4
(1.AIST(Japan), 2.JSPS (Japan), 3.CREST-JST(Japan), 4.Osaka Univ.(Japan))
https://doi.org/10.7567/SSDM.2009.P-13-3