[P-3-1] Suppression of V_th Variability for n-MOSFET in Dual Oxide Formation Process

Y. Kamata¹、K. Shibusawa¹、K. Abe²、S. Sugawa²、A. Teramoto²、T. Ohmi² (1.OKI Semiconductor Miyagi Co., Ltd.(Japan)、2.Tohoku Univ.(Japan))

https://doi.org/10.7567/SSDM.2009.P-3-1