[P-3-1] Suppression of Vth Variability for n-MOSFET in Dual Oxide Formation Process
Y. Kamata1, K. Shibusawa1, K. Abe2, S. Sugawa2, A. Teramoto2, T. Ohmi2
(1.OKI Semiconductor Miyagi Co., Ltd.(Japan), 2.Tohoku Univ.(Japan))
https://doi.org/10.7567/SSDM.2009.P-3-1