[P-3-13] Subcircuit Compact Model for Dopant-Segregated Schottky Silicon-Nanowire MOSFETs

G. Zhu¹、X. Zhou¹、Y. K. Chin¹、K. L. Pey¹、G. H. See²、S. Lin¹、J. Zhang¹、Z. Chen¹ (1.Nanyang Technological Univ.(Singapore)、2.Chartered Semiconductor Manufacturing Ltd.(Singapore))

https://doi.org/10.7567/SSDM.2009.P-3-13