[P-3-13] Subcircuit Compact Model for Dopant-Segregated Schottky Silicon-Nanowire MOSFETs

G. Zhu¹, X. Zhou¹, Y. K. Chin¹, K. L. Pey¹, G. H. See², S. Lin¹, J. Zhang¹, Z. Chen¹ (1.Nanyang Technological Univ.(Singapore), 2.Chartered Semiconductor Manufacturing Ltd.(Singapore))

https://doi.org/10.7567/SSDM.2009.P-3-13