[P-3-14] Intrinsic-Parameter-Fluctuated Power-Delay Characteristics in 16-nm-Metal-Gate CMOS Devices and Circuits

M. H. Han¹、C. H. Hwang¹、Y. Li^1,2 (1.National Chiao Tung Univ.(Taiwan)、2.National Nano Device Labs.(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-3-14