The Japan Society of Applied Physics

[P-3-21] Low Frequency Noise (1/f ) Improvements on CMOS Transistors with a Single nmm+ Doped Poly Si-SiGe Gate Stack

H. G. Jiménez1, L. T. Manera1,2, R. Wada2, J. A. Diniz1,2, I. Doi1,2, P. J. Tatsch1,2, H. E. Figueroa1,2, J. W. Swart1,2 (1.CCS-UNICAMP(Brazil), 2.Univ. of Campinas(Brazil))

https://doi.org/10.7567/SSDM.2009.P-3-21