Low Frequency Noise (1/f ) Improvements on CMOS Transistors with a Single nmm<sup>+</sup> Doped Poly Si-SiGe Gate Stack

H. G. Jiménez; L. T. Manera; R. Wada; J. A. Diniz; I. Doi; P. J. Tatsch; H. E. Figueroa; J. W. Swart

doi:https://doi.org/10.7567/SSDM.2009.P-3-21

[P-3-21] Low Frequency Noise (1/f ) Improvements on CMOS Transistors with a Single nmm⁺ Doped Poly Si-SiGe Gate Stack

H. G. Jiménez¹、L. T. Manera^1,2、R. Wada²、J. A. Diniz^1,2、I. Doi^1,2、P. J. Tatsch^1,2、H. E. Figueroa^1,2、J. W. Swart^1,2 (1.CCS-UNICAMP(Brazil)、2.Univ. of Campinas(Brazil))

https://doi.org/10.7567/SSDM.2009.P-3-21

2009 International Conference on Solid State Devices and Materials

[P-3-21] Low Frequency Noise (1/f ) Improvements on CMOS Transistors with a Single nmm+ Doped Poly Si-SiGe Gate Stack

[P-3-21] Low Frequency Noise (1/f ) Improvements on CMOS Transistors with a Single nmm⁺ Doped Poly Si-SiGe Gate Stack