The Japan Society of Applied Physics

[P-3-23] Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs

C. K. Chiang1、Y. H. Chen1、N. C. Su1、S. J. Wang1、C. C. Huang1、H. Y. Huang1、C. H. Wu2 (1.National Cheng Kung Univ.(Taiwan)、2.Chung Hua Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-3-23