Experimental Analysis of Anisotropic Impact Ionization in (110) Surface pMOSFETs

T. K. Kang; C. M. Kuo; C. L. Huang; H. L. Liu; C. Y. Wu; S. L. Wu; Y. T. Huang; S. J. Chang

doi:https://doi.org/10.7567/SSDM.2009.P-3-9

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜 2009年10月9日
Sendai Kokusai Hotel, Miyagi, Japan

[P-3-9] Experimental Analysis of Anisotropic Impact Ionization in (110) Surface pMOSFETs

T. K. Kang¹、C. M. Kuo¹、C. L. Huang¹、H. L. Liu¹、C. Y. Wu¹、S. L. Wu¹、Y. T. Huang²、S. J. Chang² (1.Cheng Shiu Univ.(Taiwan)、2.National Cheng Kung Univ(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-3-9

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