[P-4-12] A Novel Capacitor-less 1T-DRAM on Partially Depleted SOI pMOSFET based on Direct-tunneling Current in the Partial n+ Poly Gate

G. Guegan¹、P. Touret¹、G. Molas¹、C. Raynaud¹、J. Pretet² (1.CEA - LETI/MINATEC(France)、2.STMicroelectronics(France))

https://doi.org/10.7567/SSDM.2009.P-4-12