[P-4-12] A Novel Capacitor-less 1T-DRAM on Partially Depleted SOI pMOSFET based on Direct-tunneling Current in the Partial n+ Poly Gate

G. Guegan¹, P. Touret¹, G. Molas¹, C. Raynaud¹, J. Pretet² (1.CEA - LETI/MINATEC(France), 2.STMicroelectronics(France))

https://doi.org/10.7567/SSDM.2009.P-4-12