The Japan Society of Applied Physics

2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6, 2009 - Oct 9, 2009
Sendai Kokusai Hotel, Miyagi, Japan

[P-4-2] Electrical Characteristics of Engineered ZrO2/SiO2 Tunnel Barrier with a High-k HfO2 Trapping Layer for Non-Volatile Memory

H. W. You1, G. H. Park1, J. W. Jung2, W. J. Cho1 (1.Kwangwoon Univ.(Korea), 2.Sejong Univ.(Korea))

https://doi.org/10.7567/SSDM.2009.P-4-2