[P-4-2] Electrical Characteristics of Engineered ZrO₂/SiO₂ Tunnel Barrier with a High-k HfO₂ Trapping Layer for Non-Volatile Memory

H. W. You¹、G. H. Park¹、J. W. Jung²、W. J. Cho¹ (1.Kwangwoon Univ.(Korea)、2.Sejong Univ.(Korea))

https://doi.org/10.7567/SSDM.2009.P-4-2