[P-4-7] Optimized Silicon Nitride MONOS Memory for Superior Endurance of 10M Cycles

K. Yamabe¹、S. Yoshida¹、Y. Taniguchi¹、S. Kamohara¹ (1.Renesas Tech. Corp.)

https://doi.org/10.7567/SSDM.2009.P-4-7