[P-6-13] Improved Characteristics of InAlAs/InGaAs MOS-MHEMTs by using Ozone Water Oxidation Method

A. Y. Kao¹、C. S. Ho²、W. C. Hsu²、Y. N. Lai²、C. S. Lee¹ (1.Feng Chia Univ.(Taiwan)、2.National Cheng Kung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2009.P-6-13