[P-6-14] Width Dependent Electrically Stress Degradation of Bottom Gate Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

D. H. Nam¹、K. I. Chai¹、S. S. Park¹、J. G. Park¹、H. J. Yun¹、W. H. Choi¹、H. D. Lee¹、G. W. Lee¹ (1.Chungnam National Univ.)

https://doi.org/10.7567/SSDM.2009.P-6-14