The Japan Society of Applied Physics

[P-9-18] Anisotropic Transport in Epitaxial Graphene Transistor on Vicinal SiC Substrate

S. Odaka1,2,3、H. Miyazaki1,3、A. Kanda3,4、K. Morita5、S. Tanaka5、Y. Miyata6、H. Kataura6、K. Tsukagoshi1,3,6、Y. Aoyagi3,7 (1.NIMS(Japan)、2.Tokyo Tech(Japan)、3.CREST-JST(Japan)、4.Univ. of Tsukuba(Japan)、5.Kyushu Univ.(Japan)、6.AIST(Japan)、7.Ritsumeikan Univ.(Japan))

https://doi.org/10.7567/SSDM.2009.P-9-18