The Japan Society of Applied Physics

[P-9-18] Anisotropic Transport in Epitaxial Graphene Transistor on Vicinal SiC Substrate

S. Odaka1,2,3, H. Miyazaki1,3, A. Kanda3,4, K. Morita5, S. Tanaka5, Y. Miyata6, H. Kataura6, K. Tsukagoshi1,3,6, Y. Aoyagi3,7 (1.NIMS(Japan), 2.Tokyo Tech(Japan), 3.CREST-JST(Japan), 4.Univ. of Tsukuba(Japan), 5.Kyushu Univ.(Japan), 6.AIST(Japan), 7.Ritsumeikan Univ.(Japan))

https://doi.org/10.7567/SSDM.2009.P-9-18