[P-9-9] Capacitances in Tunneling Field-Effect Transistors

Y. Yang¹、X. Tong¹、L. T. Yang¹、P. F. Guo¹、L. Fan¹、G. S. Samudra¹、Y. C. Yeo¹ (1.National Univ. of Singapore)

https://doi.org/10.7567/SSDM.2009.P-9-9