[H-3-4] Electrical and Physical Characteristics of the High-K Gd₂O₃ (Gadolinium) Dielectric Deposited on the Polycrystalline Silicon

J. S. Chiu¹, C. H. Kao¹, H. Chen², P. Y. Tsung¹, Y. C. Liao¹, W. S. Liao¹, Y. T. Chung¹, H. C. Fan¹, P. L. Lai¹, C. Y. Huang¹, C. S. Lin¹, J. M. Dai¹ (1.Chang Gung Univ.(Taiwan), 2.Chi Nan Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-3-5] Highly-(001)-Oriented Ferroelectric PZT Thin Films on Glass by CW Green-Laser Crystallization

J. Jiang¹, S. Kuroki¹, K. Kotani¹, T. Ito¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-4-1] Recent advances in InN-based III-nitrides towards novel nanostructure photonic devices

A. Yoshikawa¹, Y. Ishitani¹, S. B. Che¹, N. Hashimoto¹, A. Yuki¹, H. Watanabe¹, K. Kusakabe¹ (1.Chiba Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-4-2] Epitaxial overgrowth of GaN Nanorods on Si (111) substrates by rf-plasma-assisted molecular-beam Epitaxy

J. T. Ku¹, T. H. Yang¹, J. R. Chang¹, Y. Y. Wong¹, W. C. Chou¹, C. Y. Chang¹ (1.National Chiao Tung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-4-3] Growth of (10τ3) semipolar GaN on Si substrate with a CrN interlayer by molecular beam epitaxy

K. W. Liu¹, T. H. Hsueh¹, S. J. Young¹, H. Hung¹, S. X. Chen¹, Y. Z. Chen¹, S. J. Chang¹ (1.Nation Cheng Kung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-4-4] Growth of Quaternary AlInGaN with Various TMI Molar Rates

S. F. Yu¹, S. J. Chang¹, S. P. Chang¹ (1.National Cheng Kung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-5-1] Improvement in a-GaN crystal quality by investigating different buffer layer

H. C. Hsu¹, Y. K. Su¹ (1.National Cheng Kung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-5-2] Growth and Characterization of High Quality a-plane InGaN/GaN Single Quantum Well Structure Grown by Multi-buffer Layer Technique

H. Song^1,2, J. S. Kim¹, E. K. Kim¹, Y. G. Seo², S. M. Hwang² (1.Hanyang Univ.(Korea), 2.Korea Electronics Tech. Inst.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-5-3] Enhanced Extraction and Efficiency of Blue Light Emitting Diodes Prepared using Two-Step-Etched Patterned Sapphire Substrates

Y. C. Lu¹, S. F. Yu², Y. C. S. Wu³, C. H. Chiang¹, W. C. Hsu⁴, S. J. Chang², R. M. Lin¹ (1.Chang Gung Univ.(Taiwan), 2.National Cheng Kung Univ.(Taiwan), 3.National Chiao Tung Univ.(Taiwan), 4.Sino-American Silicon Products Inc.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-5-4] Improvement of the blue LED using patterned sapphire substrates with low threading dislocation densities

S. M. Jeong¹, S. Kissinger¹, Y. H. Ra¹, S. H. Yun¹, D. W. Kim¹, S. J. Lee², J. S. Kim¹, C. R. Lee¹ (1.Chonbuk National Univ.(Korea), 2.Korea Photonics Tech. Inst.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (281 - 290)

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