[F-7-1] Three-Terminal Spin-Momentum-Transfer Magnetic Memory Element

M. Gaidis¹, J. Sun¹, E. O'Sullivan¹, G. Hu¹, J. DeBrosse¹, J. Nowak¹, D. Abraham¹, P. Trouilloud¹ (1.IBM , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[F-7-2] Spin dice: Random Number Generator using Current-induced Magnetization Switching in MgO-MTJs

A. Fukushima¹, T. Seki¹, K. Yakushiji¹, H. Kubota¹, S. Yuasa¹, K. Ando¹ (1.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[F-7-3] High-speed MRAM Random Number Generator using Error-Correcting Code

T. Tetsufumi¹, N. Shimomura¹, S. Ikegawa¹, M. Matsumoto¹, S. Fujita¹, H. Yoda¹ (1.Toshiba Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[F-8-1] Magnetic anisotropy of GaMnAs and its application for multi-valued memory device

S. Lee¹, T. Yoo¹, S. Khym¹, H. Lee¹, S. Kim¹, J. Shin¹, X. Liu², J. K. Furdyna² (1.Korea Univ. , Korea, 2.Univ. of Notre Dame , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[F-8-2] Electrical detection of Spin Transport in Si using High-quality Schottky Contacts

K. Hamaya^1,2, Y. Ando¹, M. Miyano¹ (1.Kyushu Univ., 2.PRESTO, JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[F-8-3] Spin injection into GaAs from Fe/GaO_x Tunnel Injector

H. Saito¹, J. C. Le Breton², V. Zayets¹, Y. Mineno^1,3, S. Yuasa¹, K. Ando¹ (1.National Inst. of Adv. Indus. Sci. and Tech , Japan, 2.Univ. of Twente , Netherlands, 3.Toho Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[F-8-4] Large magnetoresistance of Ge_1-xMn_x single films and heterostructures with magnetic nanocolumns

S. Yada¹, R. Okazaki¹, M. Tanaka¹ (1.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[F-9-1] Spin transfer torque effects in nanopillar devices with perpendicular anisotropy

S. Mangin¹ (1.IJL - Nancy Université , France)

2010 International Conference on Solid State Devices and Materials |PDF Download

[F-9-2] High Speed Spin-Transfer Switching in GMR Nanopillars with Perpendicular Anisotropy

H. Tomita¹, T. Nozaki¹, T. Seki¹, T. Nagase², E. Kitagawa², M. Yoshikawa², T. Daibou², M. Nagamine², S. Ikegawa², N. Shimomura², H. Yoda², Y. Suzuki¹ (1.Osaka Univ., 2.Toshiba R & D center , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[F-9-3] Hierarchical Nonvolatile Memory with Perpendicular Magnetic Tunnel Junctions for Normally-Off Computing

K. Abe¹, K. Nomura¹, S. Ikegawa¹, T. Kishi¹, H. Yoda¹, S. Fujita¹ (1.Toshiba Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (221 - 230)

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