[K-6-5] High-temperature phosphorous passivation of Si surface for improved heteroepitaxial growth of InAs as an initial step of III-As MOVPE on Si
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download