[P-6-12] Normally-off GaN MOSFET with ITO Schottky Barrier Source/Drain and (NH₄)₂S_X Surface Treatment

T. H. Kim¹, C. J. Lee¹, D. S. Kim¹, S. Y. Sung¹, B. K. Jung², Y. W. Heo¹, J. H. Lee¹, S. H. Hahm¹ (1.Kyungbook National Univ., 2.Electronics and Telecommunications Res. Inst. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-6-13] Improved optical properties of a-plane InGaN/GaN multiple quantum wells with gradient-stages MQW structure

H. C. Hsu¹, Y. K. Su², S. J. Huang¹, C. Y. Cheng¹, H. C. Chen¹, J. H. Hong¹, K. C. Chen¹, Y. J. Wang³, C. Y. Wu³, M. C. Chou³ (1.National Cheng Kung Univ., 2.Kun Shan Univ. of Tech., 3.ITRI South Micro Systems Tech. Center , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-6-14] Investigation of Bias Temperature Instability in HfInZnO Thin Film Transistor

J. S. Chang¹, S. W. Kim¹, D. W. Kwon¹, J. H. Kim¹, J. C. Park², I. Song², U. I. Jung², C. J. Kim², B. G. Park¹ (1.Seoul National Univ., 2.Samsung Adv. Inst. of Tech. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-6-15] Study of the CeO₂/HfO₂/InAs metal-oxide-semiconductor capacitors with different post-deposition-annealing temperatures

T. E. Shie¹, C. H. Chang¹, Y. C. Lin¹, K. Kakushima², H. Iwai², P. C. Lu¹, T. C. Lin¹, G. N. Huang¹, E. Y. Chang¹ (1.National Chiao Tung Univ. , Taiwan, 2.Tokyo Inst. of Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-6-16L] Transparent oxide thin-film transistors using modulation-doped heterostructures

S. Taniguchi¹, M. Yokozeki¹, M. Ikeda¹, T. Suzuki² (1.Sony Corp., 2.JAIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-7-1] Electrorefractive Effect in Strained InGaAs/InAIAs Five-Layer Asymmetric Coupled Quantum Well

T. Wajima¹, T. Arakawa¹, K. Tada² (1.Yokohama National Univ., 2.Kanazawa Inst. Of Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-7-2] Modification of Material Parameters for InGaAs/InAlAs Quantum Wells

H. Yamada¹, Y. Iseri¹, T. Arakawa¹ (1.Yokohama National Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-7-3] Influence of Intrinsic Layer Impurity in InGaAs/InAlAs Asymmetric Triple Coupled Quantum Well on Its Electrorefractive Index Change

Y. Amma¹, K. Ema¹, T. Arakawa¹ (1.Yokohama National Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-7-4] Dry Etching of Al-rich Al_xGa_1-xAs Holes with High Aspect Ratio for Photonic Crystal Fabrication

M. Mochizuki¹, T. Nakajima¹, D. Satoi¹, F. Ishikawa¹, M. Kondow¹, M. Hara¹, H. Aoki¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-7-5] Two-terminal device based on white-light emitting in GaAs single layer

S. Choi¹, Y. W. Lee², B. J. Kim¹, J. Choi¹, G. W. Seo³, H. T. Kim¹ (1.ETRI, 2.Pukyong National Univ., 3.Univ. of Science and Tech. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (521 - 530)

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