2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (751 - 760)

[PS-7-23] Demonstration of Spatial Demultiplexing of Polarization Modulation Signal Based on Magneto-optical Modulation of Multiplexed Lightwave in Fiber

^○K. Nishibayashi¹, H. Yoneda², K. Kuga³, H. Munekata¹ (1.Tokyo Tech, 2.The Univ. of Electro-Communications, 3.NHK STRL(Japan))

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[PS-7-24] Fabrication of Mesa-type Mg₂Si Pn-junction Photodiode for 2 - 4 μm IR-detection

^○T. Akiyama¹, N. Hori¹, H. Udono¹ (1.Ibaraki Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-2] Electrical Property of Single-phase HMS Grown by Temperature Gradient Solution Growth Method using Ga and Sn Solvent

^○S. Hori¹, M. Iioka¹, S. Jimba¹, Y. Hara², H. Udono¹ (1.Ibaraki Univ., 2.Ibaraki College of Tech.(Japan))

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[PS-8-3] Surface Hydrogen Passivation and Sn Distribution in Ge_1-xSn_x (001) Materials: A DFT Study

H. Johll¹, M. Samuel¹, R. Y. Koo¹, H. C. Kang^2,3, ^○S. W. Ong³, Y. C. Yeo², E. S. Tok^2,3 (1.National Junior College, 2.National Univ. of Singapore, 3.Yale-NUS College(Singapore))

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[PS-8-4] Role of Monolayer Indium Atom Distribution in Metalorganic Chemical Vapor Deposition of InAs/GaAs Epitaxy on Ge Substrate

^○H. W. Yu¹, H. Q. Nguyen¹, T. M. Wang¹, E. Y. Chang¹ (1.National Chiao Tung Univ.(Taiwan))

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[PS-8-5] Resonant Excitation of Single Luminescence Centers in GaAs:N

^○M. Ikezawa¹, N. Yasuda¹, L. Zhang¹, Y. Sakuma², K. Sakoda², Y. Masumoto¹ (1.Univ. of Tsukuba, 2.NIMS(Japan))

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[PS-8-6] Free Exciton Emission from Hexagonal Boron Nitride Films Grown on Sapphire Substrates by Low Pressure Chemical Vapor Deposition

^○N. Umehara¹, A. Masuda¹, T. Shimizu¹, T. Kouno¹, H. Kominami¹, K. Hara¹ (1.Shizuoka Univ.(Japan))

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[PS-8-7] N-face GaN (000-1) Films with Hillock-Free Smooth Surfaces Grown by Group-III-Source Flow-Rate Modulation Epitaxy

C. H. Lin¹, ^○T. Akasaka¹, H. Yamamoto¹ (1.NTT Corp.(Japan))

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[PS-8-8] Heteroepitaxial Growth of GaSb Films on Si(111)-√3×√3-Ga Surface Phase

H. Shimoyama¹, ^○M. Mori¹, K. Maezawa¹ (1.Univ. of Toyama(Japan))

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[PS-8-9] Selective-Area Growth of Heavily N-Doped C-GaN/GaAs Nanostubs on Si(100) Substrate by Molecular Beam Epitaxy

^○Y. J. Chang¹, B. Beekley¹, M. Goorsky¹, J. Woo¹ (1.Univ. of California at Los Angeles(USA))

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894 results (751 - 760)