2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (711 - 720)

[PS-6-9] [No-show]High Performance of AlGaN/GaN HEMT Device with Embedded Multiple Graphene Layers

^○C. Y. Lee¹, Y. P. Lan², Y. S. Gau³, C. H. Chen³, R. M. Lin³, C. Y. Chang^1,2 (1.Academia Sinica, 2.National Chiao Tung Univ., 3.Chang Gung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials

[PS-6-10] 2-Dimentional Characterization of Ion-Implantation Damage in GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy

^○K. Shiojima¹, S. Murase¹, S. Yamamoto¹, T. Mishima², T. Nakamura² (1.Univ. of Fukui, 2.Hosei Univ.(Japan))

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[PS-6-11] DC Characteristics in Nearly Lattice-Matched InAlN/AlGaN Heterostructure Field-Effect Transistors

^○T. Tsutsumi¹, G. Nishino¹, J. Freedsman¹, M. Miyoshi¹, T. Egawa¹ (1.Nagoya Inst. of Tech.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-12] High-Quality PECVD SiO₂ Gate Oxide for Use in Normally-Off AlGaN/GaN Recessed MOS-HFETs

^○H. S. Kim¹, J. G. Lee², S. H. Park¹, S. W. Han¹, K. S. Seo³, H. Y. Cha¹ (1.Hongik Univ., 2.Univ. of Texas at Dallas, 3.Seoul National Univ.(Korea))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-13] Analysis of Post-Deposition Annealing Effects on Insulator/Semiconductor Interface of Al₂O₃/AlGaN/GaN High-Electron-Mobility Transistors on Si Substrates

^○T. Kubo¹, M. Miyoshi¹, T. Egawa¹ (1.Nagoya Inst. of Tech.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-14] High Thermal Stability AlGaN/GaN Schottky Barrier Diode with Diamond-Like Carbon (DLC) Heat Dissipation Anode Design

^○Y. H. Cheng¹, H. Y. Wang¹, L. Y. Peng¹, H. C. Chiu¹ (1.Chang Gung Univ.(Taiwan))

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[PS-6-15] Nonvolatile Memory Effects in GaN Metal-Oxide-Semiconductor Heterostructure FETs with Thin AlGaN Barrier

^○D. M. Keum¹, K. H. Cho¹, H. T. Kim¹ (1.Hongik Univ.(Korea))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-16] Low Current Collapsed AlGaN/GaN HEMT-on-Si Substrate with SiN_x / HfO₂ Dual Passivation Layer

^○D. H. Kim¹, M. J. Kang¹, S. K. Eom¹, H. Y. Cha², K. S. Seo¹ (1.Seoul National Univ., 2.Hongik Univ.(Korea))

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[PS-6-17] Preparation of InAs Surface by Hydrogen Plasma Pre-Treatment for Low Interfacial Trap Density MOS Capacitors

^○C. Y. Chen¹, C. H. Hsieh¹, W. J. Hsueh¹, J. I. Chyi^1,2 (1.National Central Univ., 2.Academia Sinica(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-18] Analysis of Energy States Where Electrons and Holes Coexist in Pseudomorphically Strained InAs HEMTs

^○Y. Nishio¹, T. Sato¹, N. Hirayama¹, T. Iida¹, Y. Takanashi¹ (1.Tokyo Univ. of Science(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

894 results (711 - 720)