[PS-9-14] Inserted-cation-dependent Device Characteristic of SrVO₃-based All-solid-state Redox Transistor

^○M. Takayanagi^1,2, T. Tsuchiya¹, W. Namiki^1,2, T. Higuchi², K. Terabe¹ (1.NIMS (Japan), 2.Tokyo Univ. Sci. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:43 PM - 4:44 PM |PDF Download

[PS-9-15] Snell's Law for Magnetostatic Forward Volume Wave

^○T. Li¹, T. Taniguchi^1,2, Y. Shiota¹, T. Moriyama¹, T. Ono^1,3 (1.Kyoto Univ. (Japan), 2.Tech. Univ. of Munich (Germany), 3.Osaka Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:44 PM - 4:45 PM |PDF Download

[PS-9-16] Penetration depths of superconducting TiN films estimated from coplanar waveguide resonators

^○W. Qiu¹, H. Terai¹ (1.NICT (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:45 PM - 4:46 PM |PDF Download

[PS-9-17] Environmental engineering for quantum energy transport

^○C. Uchiyama^1,3, W.J. Munro², K. Nemoto³ (1.Univ. of Yamanashi (Japan), 2.NTT Basic Research Laboratories (Japan), 3.National Institute of Informatics (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:46 PM - 4:47 PM |PDF Download

[PS-9-18] Effect of the Number of Quantum Wells on SiGe/Si Based Thermistor Performance

^○C. Baristiran Kaynak¹, Y. Yamamoto¹, A. Goeritz¹, F. Korndoerfer¹, M. Wietstruck¹, A. Shafique², Y. Gurbuz², M. Kaynak^1,2 (1.IHP (Germany), 2.Sabanci Univ. (Turkey))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:47 PM - 4:48 PM |PDF Download

[PS-9-19] A photon generating device composed of a quantum dot and a metamaterial element

K. Mukai¹,^○S. Watanabe¹, I. Okumura¹, T. Sugimoto¹ (1.Yokohama National Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:48 PM - 4:49 PM |PDF Download

[PS-9-20] Device Characteristics of Nano Scale Junctionless Accumulation Mode FET (JAM-FET) with Localized Anti-channel Doping

^○C.L. Lin¹, J.D. Lee¹, Y.J. Lee², Y.J. Lu¹, W.K. Yeh^3,2, T.K. Kang¹, P.C. Juan⁴, Y.Z. Zhu¹, T.Y. Lin¹ (1.Feng Chia University (Taiwan), 2.National Nano Device Laboratories (Taiwan), 3.National University of Kaohsiung (Taiwan), 4.Mingchi University of Technology (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:49 PM - 4:50 PM |PDF Download

[PS-9-21 (Late News)] Impact of quantum dot characteristics on the hybrid SET-FET circuit behavior

^○E. Amat¹, F. Klüpfel², A. del Moral¹, J. Bausells¹, F. Perez-Murano¹ (1.Institute of Microelectronic of Barcelona (IMB-CNM, CSIC) (Spain), 2.Fraunhofer Institute for Integrated Systems and Device Technology (IISB) (Germany))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:50 PM - 4:51 PM |PDF Download

[PS-9-22 (Late News)] Anomalous Nernst Effect in NiMnSb Half-Heusler Alloy Thin Film

^○H. Sharma^1,2, Z. Wen^1,3, K. Takanashi^1,3, M. Mizuguchi^1,2,3 (1.Tohoku Univ. (Japan), 2.CREST-JST (Japan), 3.CSRN, Tohoku Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:51 PM - 4:52 PM |PDF Download

[PS-9-23 (Late News)] Conductive filaments controlled ferromagnetism in Co-doped ZnO resistive switching memory device

^○S.S. Li¹, Y.K. Su^1,2 (1.National Cheng Kung Univ. (Taiwan), 2.Kun Shan Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:52 PM - 4:53 PM |PDF Download