2018 International Conference on Solid State Devices and Materials

Sep 9, 2018 - Sep 13, 2018
University of Tokyo

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922 results (391 - 400)

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[N-2-04] Improving hole mobility of solid-phase crystallized Ge on glass by reduction of carrier scattering factors

^○T. Imajo¹, R. Yoshimine¹, K. Moto¹, T. Suemasu¹, K. Toko¹ (1.Univ. of Tsukuba (Japan))

2018 International Conference on Solid State Devices and Materials |Tue. Sep 11, 2018 4:15 PM - 4:30 PM |PDF Download

[N-2-05] Extremely High Resistance of Thin Flexible Glass against Thermal Stress Induced by Ultra-rapid Annealing

T. Hieda¹,^○S. Higashi¹ (1.Hiroshima Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Tue. Sep 11, 2018 4:30 PM - 4:45 PM |PDF Download

[N-3-01 (Invited)] Development of spinel-type ZnGa₂O₄ thin-film transistor and its application to flexible devices

^○M. Nakazumi¹, Y. Nishi¹, Y. Kito¹, K. Iwahori¹ (1.Nikon Corp. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 9:00 AM - 9:30 AM |PDF Download

[N-3-02] Spike Pattern Dependent Characteristics of Artificial Neuron using Proton Conductive SiO₂ Electrolyte and InZnO System

X. Zhao¹,^○S. Wang^1,3, L. Zhu^2,3 (1.Inst. of Microelectronics, Chinese Academy of Sciences (China), 2.Ningbo Inst. of Materials Tech. and Eng., Chinese Academy of Sciences (China), 3.Univ. of Chinese Academy of Sciences (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 9:30 AM - 9:45 AM |PDF Download

[N-3-03] Study on the Behaviors of HNO₃ in Highly Conductive Antimony Doped Tin Oxide Thin Films Deposited by Novel Mist CVD System

^○L. Liu¹, T. Kawaharamura¹, M. Ueda¹, G.T. Dang¹, S. Sato¹, S. Fujita², T. Hiramatsu³, H. Orita³ (1.Kochi Univ. of Tech. (Japan), 2.Kyoto Univ. (Japan), 3.Toshiba Mitsubishi-Electric Indus. Systems Corp. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 9:45 AM - 10:00 AM |PDF Download

[N-3-04] High-temperature Electrical Characteristics of 60nm CAAC-IGZO FET : Comparison with Si FET

^○H. Kunitake¹, S. Ohshita¹, S. Saga¹, Y. Narusawa¹, N. Ishihara¹, R. Honda¹, M. Kurata¹, T. Atsumi¹, K. Kato¹, C.M. Lai², D. Chen², S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan), 2.United Microelectronics Corporation (UMC) (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 10:00 AM - 10:15 AM |PDF Download

[N-3-05 (Late News)] Activation and Defect Reduction of Hydrogenated In–Ga–Zn–O Thin Film Transistor at Low Temperature (150 °C)

^○S.G.M. Aman¹, Y. Hirota¹, Y. Magari¹, M. Furuta¹ (1.Kochi University of Technology (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 10:15 AM - 10:30 AM |PDF Download

[N-5-01] Symmetric Ni-Induced Lateral Crystallization Poly-Si TFTs with Low Metal Contaminations

^○P.Y. Kuo¹, J.L. Wang¹, Z.H. Li¹, P.T. Liu¹ (1.National Chiao Tung Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 1:30 PM - 1:45 PM |PDF Download

[N-5-02] Poly-Si Thin-Film-Transistors with Dot-Array Doping Channels Fabricated by Nano Imprint Lithography

^○H.J.H. Chen¹, S. Shih¹, S.L. Tseng¹, T.N. Lee², S.Z. Chen², K.C. Hsieh² (1.National Chi Nan Univ. (Taiwan), 2.National Tsing Hua Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 1:45 PM - 2:00 PM |PDF Download

[N-5-03] RF Characteristics of Trigate Poly-Si Thin-Film Transistors with Different Layout Geometries

^○B.Y. Chen^1,2, K.M. Chen¹, Y.S.J. Shiao¹, C.J. Lin¹, G.W. Huang¹, H.C. Chen¹, F.K. Hsueh¹, C.H. Shen¹, J.M. Shieh¹, E.Y. Chang² (1.National Nano Device Labs. (Taiwan), 2.National Chiao Tung Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 2:00 PM - 2:15 PM |PDF Download

922 results (391 - 400)

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