[PS-10-11] Effect of Low Angle Grain Boundaries on Electron and Hole Mobility
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
922件中(631 - 640)
[PS-10-12] Effects of cluster deposition on spatial profile of Si-Hx bond density in a-Si:H films
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-10-13] 1mm-long and 4µm-wide twin free single crystal Si stripe on glass fabricated by μ-CLBA method
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-10-14] Wafer-Level-Probing Electrical Properties of Planar Junctionless Poly-Si Thin-Film Transistors Using a Novel C-V Charcacterization Scheme
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-10-15] Mechanical Bending Stress Simulation of Thin Film Transistor On Flexible Substrate
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-10-16] New AMOLED Compensation Pixel Circuit with Simultaneous Emission Method for Non-uniform Electrical Characteristics Based on P-type LTPS TFTs
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-10-17 (Late News)] Stacked Source/Drain Electrode Structure of InGaZnO Thin-Film-Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-10-18 (Late News)] Impacts of doped element on ferroelectric phase stabilization in HfO2 through non-equilibrium PDA
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-11-01] Growth of Single-Crystal (0001) GaN Films on (0001) Sapphire Substrates Using h-BN Buffer Layers by Molecular Beam Epitaxy
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-11-02] Directionally solidified Ce:LaCl3/AECl2 (AE=Mg, Ca, Sr, Ba) eutectic scintillator growth for high resolution X-ray imaging.
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)