[H-2-04] A 25-Gb/s × Four-Channel Chip-Scale Optical Receiver Operating up to 85 °C with a Temperature-Compensation Function

^○D. Okamoto¹, Y. Suzuki¹, Y. Hagihara², M. Kurihara², T. Nakamura¹, K. Kurata² (1.PETRA (Japan), 2.AIOcore Co., Ltd. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 16:30 〜 16:45 |PDF ダウンロード

[H-3-01 (Invited)] Technological advances on CMOS compatible hybrid III-V/Si lasers in 200mm platform

^○K. Hassan¹, B. Szelag¹, L. Adelmini¹, B. Montmayeul¹, L. Sanchez¹, E. Ghegin^1,2, P. Rodriguez¹, S. Bensalem¹, F. Nemouchi¹, T. Bria¹, M. Brihoum¹, P. Brianceau¹, E. Vermande¹, O. Pesenti¹, A. Schembri¹, R. Crochemore¹, S. Dominguez², M.-C. Roure¹, C. Jany¹ (1.CEA - LETI (France), 2.STMicroelectronics (France))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 09:00 〜 09:30 |PDF ダウンロード

[H-3-02] InGaAlAs-InP lateral current injection photonic crystal laser design embedded into the silicon photonics platform

^○C. Caer¹, Y. Baumgartner¹, M. Seifried¹, G. Villares¹, H. Hahn¹, N. Meier¹, D. Caimi¹, M. Sousa¹, B.J. Offrein¹, L. Czornomaz¹ (1.IBM Research - Zurich Research Laboratory (Switzerland))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 09:30 〜 09:45 |PDF ダウンロード

[H-3-03] Heat Dissipation property of III-V on SiC Platform for Photonic Integrated Circuits

T. Sanjoh¹, N. Sekine¹, S. Takagi¹,^○M. Takenaka¹ (1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 09:45 〜 10:00 |PDF ダウンロード

[H-3-04 (Invited)] III-V/Si Photonic Integration Platform for On-Si Laser Diodes and High Efficiency Mach-Zehnder Modulators

^○T. Hiraki^1,2, T. Aihara¹, K. Takeda^1,2, T. Fujii^1,2, T. Kakitsuka^1,2, T. Tsuchizawa^1,2, H. Fukuda^1,2, S. Matsuo^1,2 (1.NTT Device Tech. Labs. (Japan), 2.NTT Nanophotonics Center (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 10:00 〜 10:30 |PDF ダウンロード

[H-4-01] Si₃N₄-based optical frequency comb generation featuring front-end CMOS- and Si-photonics process compatibility

^○H. El Dirani¹, A. Kamel², M. Casale¹, S. Kerdiles¹, C. Monat³, X. Letartre³, M. Pu², L.K. Oxenløwe², K. Yvind², C. Sciancalepore¹ (1.CEA-Leti (France), 2.DTU Fotonik, Technical University of Denmark (Denmark), 3.Institut des Nanotechnologies de Lyon, (France))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 10:45 〜 11:00 |PDF ダウンロード

[H-4-02] SiN Integrated Photonics Platform for Near-Infrared Range Applications

^○N. Tyler¹, D. Fowler¹, S. Malhouitre¹, S. Brision¹, O. Lemonnier¹, W. Rabaud¹, B. Szelag¹ (1.Univ. Grenoble Alpes and CEA, LETI, Minatec Campus (France))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 11:00 〜 11:15 |PDF ダウンロード

[H-4-03] Ring Resonator Designed for Biosensing Applications Manufactured on 300 mm SOI in an Industrial Environment

^○M. Calvo^1,2,3,4, S. Guerber⁴, G. Beaudin^1,2, M. Canva^1,2, P. Rojo-Romeo^1,2,3, C. Baudot⁴, F. Boeuf⁴, R. Orobtchouk³, P. Charette^1,2, S. Monfray⁴ (1.Lab. Nanotechnologies et Nanosystèmes, Univ. of Sherbrooke (Canada), 2.Inst. interdisciplinaire d'Innovation Technologique, Univ. of Sherbrooke (Canada), 3.Inst. des Nanotechnologies de Lyon (France), 4.STMicroelectronics (France))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 11:15 〜 11:30 |PDF ダウンロード

[H-4-04] Nonlinear properties of ultra-low losses hydrogen-annealed submicron silicon waveguides

H. El Dirani¹, C. Bellegarde³, C. Petit-Etienne³, C. Monat⁴, J.-M. Hartmann², E. Pargon³,^○C. Sciancalepore¹ (1.CEA-Leti, Optics and Photonics Divisions (France), 2.CEA-Leti, Silicon Technologies Division (France), 3.LTM, Centre National de la Recherche Scientifique (France), 4.Institut des Nanotechnologies de Lyon, (France))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 11:30 〜 11:45 |PDF ダウンロード

[H-4-05] On-Chip Integration of RF Termination Resistor and Backside Via Hole in InP-Based Mach-Zehnder Modulator for Compact Coherent Transceiver

^○T. Kitamura¹, M. Watanabe¹, N. Kono¹, T. Kikuchi¹, R. Yamabi¹, H. Tanaka¹, M. Seki¹, T. Katsuyama¹, M. Ekawa¹, H. Shoji¹ (1.Sumitomo Electric Industries, LTD. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 11:45 〜 12:00 |PDF ダウンロード