[PS-8-16] Fabrication of MoS₂ layers on free-standing GaN for heterojunction photoresponsive device applications

^○P. Desai¹, A.K. Ranade¹, R.D. Mahyavanshi¹, M. Tanemura¹, G. Kalita^1,2 (1.Nagoya Inst. of Tech. (Japan), 2.Frontier Res. Inst. for Material Sci. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:15 AM - 11:17 AM |PDF Download

[PS-8-17] First-Principles Study on Formation of Freestanding Silicene and Germanene

^○M. Araidai^1,2,3, M. Kurosawa^2,3, A. Ohta^2,3, K. Shiraishi^1,2 (1.IMaSS, Nagoya Univ. (Japan), 2.Grad. Sch. of Eng., Nagoya Univ. (Japan), 3.IAR, Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:17 AM - 11:19 AM |PDF Download

[PS-8-18] Development of Fabrication process for tin sulfide (SnS_X) thin films by solution-based atmospheric-pressure mist CVD

^○S. Sato¹, P. Rutthongjan¹, L. Liu^1,2,3, G.T. Dang^1,2,3, T. Kawaharamura^1,2,3 (1.Eng. Course, Graduate School of Engineering, Kochi Univ. of Technol. (Japan), 2.School of Systems Engineering, Kochi Univ. of Technol. (Japan), 3.Center for Nanotechnology, Res. Inst., Kochi Univ. of Technol. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:19 AM - 11:21 AM |PDF Download

[PS-8-19] Chemical Vapor Deposition of NbS₂ from a Chloride Source

T. Yanase¹, S. Watanabe¹, M. Weng¹, T. Nagahama¹,^○T. Shimada¹ (1.Hokkaido Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:21 AM - 11:23 AM |PDF Download

[PS-8-20 (Late News)] Thickness and Aspect Ratio Dependences of Magnetic Domain Structures in Patterned CoFe Thin Films on GaAs (001) Substrates

^○K. Teramoto¹, R. Horiguchi¹, Y. Adachi², M. Akabori², S. Hara¹ (1.Hokkaido Univ. (Japan), 2.JAIST (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:23 AM - 11:25 AM |PDF Download

[PS-8-21 (Late News)] Photoresponse Enhancement in MoS₂ Phototransistors by the Photogating Effect

^○R. Nur¹, K. Toprasertpong¹, S. Takagi¹, M. Takenaka¹ (1.Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:25 AM - 11:27 AM |PDF Download

[PS-8-22 (Late News)] [No-Show]Highly sensitive electrochemical sensor based on one-step synthesis of nanorod-nanoflake hybrid WS₂ for detection of uric acid and quercetin

^○S. Badhulika¹, L. Durai¹, C.Y. Kong² (1.Indian Inst. of Tech. (IIT), Hyderabad (India), 2.Shizuoka Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:27 AM - 11:29 AM

[PS-8-23 (Late News)] Unidirectional out-of-plane spin textures in two-dimensional group-IV monochalcogenide MX monolayer for persistent spin helix

^○M.A.U. Absor¹, F. Ishii² (1.Gadjah Mada Univ. (Indonesia), 2.Kanazawa Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:29 AM - 11:31 AM |PDF Download

[PS-9-01] Hole spin g-factor in p-type silicon single and double quantum dots

^○H. Wei¹, S. Mizoguchi¹, R. Mizokuchi¹, T. Kodera¹ (1.Tokyo Tech (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:45 AM - 10:47 AM |PDF Download

[PS-9-02] Boron-doped Diamond Superconducting Quantum Interference Devices Operating up to 10 K

^○A. Morishita¹, I. Tsuyuzaki¹, T. Kageura^1,2, S. Amano¹, Y. Takano², M. Tachiki², S. Ooi², S. Arisawa², H. Kawarada^1,3 (1.Waseda Univ. (Japan), 2.MANA NIMS (Japan), 3.The Kagami Memorial Laboratory for Materials Sci. and Tech. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:47 AM - 10:49 AM |PDF Download