[K-4-03] Gallium-nitride-based Heterojunction Bipolar Transistors with Two-dimensional Hole Gas Fabricated by Epitaxial Lift-off Process

^○T. Kumabe¹, M. Ogura¹, A. Tanaka^2,3, Y. Ando¹, H. Watanabe², S. Usami¹, M. Deki², S. Nitta², Y. Honda², H. Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ. (Japan), 2.IMaSS, Nagoya Univ. (Japan), 3.NIMS (Japan), 4.VBL, Nagoya Univ. (Japan), 5.ARC, Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 4:15 PM - 4:30 PM |PDF Download

[K-4-04 (Late News)] High-Power GaN-on-Diamond HEMTs Fabricated by Surface-Activated Room-Temperature Bonding

^○S. Hiza¹, M. Fujikawa¹, Y. Takiguchi¹, K. Nishimura¹, E. Yagyu¹, T. Matsumae², Y. Kurashima², H. Takagi², M. Yamamuka¹ (1.Mitsubishi Electric Corp. (Japan), 2.AIST (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 4:30 PM - 4:45 PM |PDF Download

[K-5-01 (Invited)] Advances in inversion channel diamond MOSFETs

^○N. Tokuda^1,2, T. Matsumoto¹, T. Inokuma¹, S. Yamasaki^1,2, H. Kato², T. Makino², C.E. Nebel^1,3 (1.Kanazawa Univ. (Japan), 2.AIST (Japan), 3.Fraunhofer Inst. (Germany))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 9:00 AM - 9:30 AM |PDF Download

[K-5-02] RF Power Performance of 2DHG Diamond MOSFETs with thick ALD-Al₂O₃ Film

^○K. Kudara¹, S. Imanishi¹, K. Horikawa¹, A. Hiraiwa¹, H. Kawarada^1,2 (1.Waseda Univ. (Japan), 2.Kagami Memorial Res. Inst. for Materials Science and Tech. (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 9:30 AM - 9:45 AM |PDF Download

[K-5-03] (111) Vertical-type 2DHG Diamond MOSFETs with Hexagonal Trench Structures

^○J. Nishimura¹, M. Iwataki¹, N. Oi¹, A. Morishita¹, A. Hiraiwa¹, H. Kawarada^1,2 (1.Waseda Univ. (Japan), 2.The Kagami Memorial Lab. for Materials Sci. and Tech. (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 9:45 AM - 10:00 AM |PDF Download

[K-5-04] Impact of Post Deposition Annealing on Chemical Bonding Features and Filled Electronic Defects of AlSiO/GaN(0001) Structure

^○A. Ohta¹, D. Kikuta², T. Narita², K. Itoh², K. Makihara¹, T. Kachi¹, S. Miyazaki¹ (1.Nagoya Univ. (Japan), 2.Toyota Central R&D Labs. Inc. (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 10:00 AM - 10:15 AM |PDF Download

[K-6-01 (Invited)] Carrier Scattering Mechanism in SiC Trench MOSFETs

^○K. Kutsuki¹, E. Kagoshima², T. Onishi², J. Saito², K. Yamamoto³, Y. Watanabe¹ (1.Toyota Central R&D Labs., Inc. (Japan), 2.TOYOTA MOTOR CORP. (Japan), 3.DENSO CORP. (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 10:30 AM - 11:00 AM |PDF Download

[K-6-02] Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET

^○W. Takeuchi^1,2, K. Kutsuki³, E. Kagoshima⁴, T. Onishi⁴, S. Iwasaki⁴, M. Sakashita², H. Fujiwara⁴, O. Nakatsuka² (1.Aichi Institute of Tech. (Japan), 2.Nagoya Univ. (Japan), 3.Toyota Central R&D LABS., INC (Japan), 4.TOYOTA MOTOR CORP. (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 11:00 AM - 11:15 AM |PDF Download

[K-6-03] In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al₂O₃/4H-SiC(0001) Gate Stacks

^○T. Doi^1,2, S. Shibayama¹, W. Takeuchi^1,3, M. Sakashita¹, N. Taoka¹, M. Shimizu², O. Nakatsuka¹ (1.Nagoya Univ. (Japan), 2.AIST-NU GaN-OIL (Japan), 3.Aichi Inst. of Tech. (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 11:15 AM - 11:30 AM |PDF Download

[K-6-04] Practical Extraction Method of Interface State Density near Conduction Band Edge of 4H-SiC MOSFET Channel

^○S. Sato¹, K. Kobayashi¹, Y. Mori¹, D. Hisamoto¹, A. Shima¹ (1.Hitachi Ltd. (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 11:30 AM - 11:45 AM |PDF Download