H₂ ambient

〇Tianlin Yang¹, Koji Kita¹ (1.Univ. of Tokyo)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 11:36 AM - 11:43 AM |PDF Download

[D-4-06] The Exceptional Advantages of Channeling Implantation into 4H-SiC to make Abrupt Deep Profiles

〇Ryota Wada¹, Tsutomu Nagayama¹, Nobuhiro Tokoro¹, Takashi Kuroi¹, Hrishikesh Das², Swapna Sunkari², Joshua Justice² (1.NISSIN ION EQUIPMENT CO.,LTD., 2.ON Semiconductor)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 11:43 AM - 11:50 AM |PDF Download

[D-4-07] Effects of the ion implantation process on carrier lifetimes in 4H-SiC SJ-MOSFET

〇Takuya Fukui¹, Takeshi Tawara², Masashi Kato¹ (1.Nagoya Institute of Technology, 2.National Institute of Advanced Industrial Science and Technology)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 11:50 AM - 11:57 AM |PDF Download

[D-4-08] Zigzag Structure of Partial Dislocations Expanded from Basal Plane Dislocation Segment near the Epilayer Surface of 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba Corp.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 11:57 AM - 12:04 PM |PDF Download

[D-4-09] Characterization of Local Strain in 4H-SiC Trench MOSFET by Synchrotron Nanobeam X-ray Diffraction

〇Wakana Takeuchi¹, Eiji Kagoshima², Kazushi Sumitani³, Yasuhiko Imai³, Shigehisa Shibayama⁴, Mitsuo Sakashita⁴, Shigeru Kimura³, Hidemoto Tomita², Tsuyoshi Nishiwaki², Hirokazu Fujiwara², Osamu Nakatsuka⁴ (1.Aichi Inst. of Tech., 2.MIRISE Tech., 3.JASRI, 4.Nagoya Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 12:04 PM - 12:11 PM |PDF Download

[D-6-01 (Invited)] Recent progress in crystal growth of β-Ga₂O₃ for power-device applications

〇Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Tech., Inc.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 3:45 PM - 4:15 PM |PDF Download

[D-6-02] High-temperature annealing of α- and β-Ga₂O₃ epitaxial films grown by liquid-injection MOCVD

〇Milan Tapajna¹, Filip Gucmann¹, Kristina Husekova¹, Peter Nadazdy¹, Edmund Dobrocka¹, Fridrich Egyenes-Porsok¹, Juraj Priesol², Alexander Satka² (1.Institute of Electrical Engineering SAS, 2.Institute of Electronics and Photonics, Slovak University of Technology, Faculty of Electrical Engineering and Information Technology)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:15 PM - 4:22 PM |PDF Download

[D-6-03] Structures and Stability of GaN/ β-Ga₂O₃ Interface: A First-Principles Study

〇Fumiaki Hishiki¹, Toru Akiyama¹, Takahiro Kawamura¹, Tomonori Ito¹ (1.Mie University)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:22 PM - 4:29 PM |PDF Download

[D-6-04] DC Characteristics of the p-NiO_x/n-Ga₂O₃ Junction FETs Based on Heterointegrated Ga₂O₃-on-SiC by Ion Cutting Process

〇Haodong Hu¹, Hehe Gong², Wenhui Xu³, Yibo Wang¹, Tiangui You³, Genquan Han¹, Jiandong Ye², Xin Ou³, Yan Liu¹, Yue Hao¹ (1.Xidian University, 2.Nanjing University, 3.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:29 PM - 4:36 PM |PDF Download

[D-6-05] DFT study on structure and anisotropy of high N-atom density layer in 4H-SiC

〇Naoki Komatsu¹, Yoshiyuki Egami², Tomoya Ono¹, Mitsuharu Uemoto¹ (1.Kobe Univ., 2.Hokkaido Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:36 PM - 4:43 PM |PDF Download